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One-dimensional ballistic transport of electrons

Published:1990-12-01 Issue:12 Volume:5 Page:1185-1188
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Pepper M,Smith C G,Brown R J,Wharam D A,Kelly M J,Newbury R,Ahmed H,Hasko D G,Peacock D C,Frost J E F,Ritchie D A,Jones G A C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/5/i=12/a=007/pdf

Reference24 articles.

1. One-Dimensional Conduction in the 2D Electron Gas of a GaAs-AlGaAs Heterojunction

2. Magnetic Depopulation of 1D Subbands in a Narrow 2D Electron Gas in a GaAs:AlGaAs Heterojunction

3. Empirical relation between gate voltage and electrostatic potential in the one-dimensional electron gas of a split-gate device

4. One-dimensional transport and the quantisation of the ballistic resistance

5. Quantized conductance of point contacts in a two-dimensional electron gas

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of atomic–force microscope for creation of one–dimensional structure on the basis of GaAs/AlGaAs heterostructure;Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering;2019-06-20

2. Use of atomic force microscope for the synthesis of GaAs/AlGaAs heterostructure base one-dimensional structure;Modern Electronic Materials;2018-12-01

3. Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography;Semiconductors;2017-11

4. Single-particle relaxation time of one-dimensional electron gases;Physical Review B;1992-07-15

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