Optically induced hysteresis of bilateral p–i–n junctions incorporated with InAs quantum dots
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Detection of single photons using a field-effect transistor gated by a layer of quantum dots
2. Efficient Single Photon Detection by Quantum Dot Resonant Tunneling Diodes
3. Exciton Storage in Semiconductor Self-Assembled Quantum Dots
4. Coherent properties of a two-level system based on a quantum-dot photodiode
5. Electrically pumped single-photon sources in lateral p-i-n junctions
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Voltage-controlled electron tunneling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based photovoltaic cell;Journal of Applied Physics;2011-09
2. Optically controlled quantum dot gated transistors with high on/off ratio;Applied Physics Letters;2010-02-22
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