X-ray absorption fine structure of ion-implanted semiconductors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
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1. Contribution of core-loss fine structures to the characterization of ion irradiation damages in the nanolaminated ceramic Ti3AlC2;Acta Materialia;2013-11
2. Modeling of the Structural Properties of Hg1–x Cd x Te;Journal of Electronic Materials;2008-06-18
3. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films;Surface Science Reports;2004-05
4. Dependency of p-n junction depth on ion species implanted in HgCdTe;Journal of Electronic Materials;1999-06
5. X-ray Spectrometry;Analytical Chemistry;1998-05-19
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