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Molecular beam epitaxial growth and magneto-transport studies of the InSb/CdTe material systems

  • Published:1990-03-01 Issue:3S Volume:5 Page:S311-S314
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Golding T D,Greene S K,Pepper M,Dinan J H,Cullis A G,Williams G M,Whitehouse C R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy;Infrared Physics & Technology;2013-05

2. Electronic characterization of InSb quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2000-05

3. Increased electron mobility of InAsSb channel heterostructures grown on GaAs substrates by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

4. High-mobility electron systems in remotely-doped InSb quantum wells;Journal of Crystal Growth;1999-05

5. Study of factors limiting electron mobility in InSb quantum wells;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
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