Non-destructive characterization of HgCdTe using photoinduced microwave reflection-Reference-Cited by-同舟云学术

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Non-destructive characterization of HgCdTe using photoinduced microwave reflection

Published:1993-06-01 Issue:6S Volume:8 Page:936-940
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Spada E J,Rao V R,Bhat I,Borrego J M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=6S/a=014/pdf

Reference6 articles.

1. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements

2. Non-destructive lifetime measurement in silicon wafers by microwave reflection

3. The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II.

4. Experimental requirements for the measurement of excess carrier lifetime in semiconductors using microwave techniques

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of polishing of HgCdTe wafers;SPIE Proceedings;2011-06-09

2. A measurement of the electron‐hole lifetimes in CdZnTe at 300 and 79 K using a pulsed x‐ray microwave technique;Applied Physics Letters;1996-08-26

3. Minority carrier lifetime in doped and undoped epitaxially grown n-type CdxHg1−xTe;Journal of Electronic Materials;1995-11

4. Novel techniques for characterizing detector materials using pulsed infrared synchrotron radiation;Semiconductor Science and Technology;1993-06-01

5. Minority carrier lifetime in mercury cadmium telluride;Semiconductor Science and Technology;1993-06-01

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