Photoluminescence and excitation spectroscopy of ZnTe/GaAs epilayers grown by hot-wall epitaxy-Reference-Cited by-同舟云学术

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Photoluminescence and excitation spectroscopy of ZnTe/GaAs epilayers grown by hot-wall epitaxy

Published:1991-09-01 Issue:9A Volume:6 Page:A90-A95
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Kudlek G,Presser N,Gutowski J,Hingerl K,Abramof E,Sitter H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/6/i=9A/a=016/pdf

Reference21 articles.

1. Optical properties of II-VI epitaxial layers

2. Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAs

3. Intrinsic and extrinsic photoluminescence spectra of ZnTe films on GaAs deposited by molecular‐beam and organo‐metallic vapor‐phase epitaxy

4. Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of substrate temperature on optical properties and strain distribution of ZnTe epilayer on (100) GaAs substrates;Thin Solid Films;2013-06

2. Effects of substrate temperature upon optical properties of ZnTe epilayers grown on (100) GaAs substrates by MOVPE;physica status solidi (a);2012-06-26

3. Photoluminescence of ZnTe and ZnTe:Cr grown by molecular-beam epitaxy;Journal of Applied Physics;2005-01

4. Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe deposited by metalorganic vapor phase epitaxy;Journal of Applied Physics;2004-07-15

5. Growth and evaluation of high-quality ZnTe/GaAs by hot wall epitaxy;PHYS STATUS SOLIDI A;2002

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