Electrical mechanisms for carrier compensation in homoepitaxial nonpolar m-ZnO doped with nitrogen
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Published:2016-02-04
Issue:3
Volume:31
Page:035010
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ISSN:0268-1242
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Container-title:Semiconductor Science and Technology
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language:
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Short-container-title:Semicond. Sci. Technol.
Author:
Kurtz A,Hierro A,Lopez-Ponce M,Tabares G,Chauveau J M
Funder
Agence Nationale de la Recherche
Ministerio de Economía y Competitividad
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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