Dependence of memory characteristics on the (ZrO2)x(SiO2)1−xelemental composition for charge trap flash memory applications-Reference-Cited by-同舟云学术

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Dependence of memory characteristics on the (ZrO2)x(SiO2)1−xelemental composition for charge trap flash memory applications

Published:2015-05-18 Issue:6 Volume:30 Page:065010
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Tang Zhenjie,Lu Xubing,Yang Yupeng,Zhang Jing,Ma Dongwei,Li Rong,Zhang Xiwei,Hu Dan,Li Tingxian

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=6/a=065010/pdf

Reference24 articles.

1. Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

2. Improved charge-trapping properties of TiON/HfON dual charge storage layer by tapered band structure

3. Design considerations in scaled SONOS nonvolatile memory devices

4. Programme and retention characteristics of SONOS memory arrays with layered tunnel barrier

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1. Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories;Applied Surface Science;2021-03

2. Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands*;Chinese Physics B;2020-04-01

3. Improved memory characteristics for nonvolatile memory by using a double-potential well charge trapping layer;Applied Physics Express;2019-06-21

4. Tunable charge trapping behavior of solution processed ZrO2 (MOS) in presence of different optical illumination;DAE SOLID STATE PHYSICS SYMPOSIUM 2018;2019

5. Correlation between memory characteristics and energy band bending resulted from composition distribution of trapping layer for charge trap memory;Semiconductor Science and Technology;2018-10-25

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