Room temperature laser emission of 1.5 m from InAs/InP(311)B quantum dots-Reference-Cited by-同舟云学术

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Room temperature laser emission of 1.5 m from InAs/InP(311)B quantum dots

Published:2002-01-22 Issue:2 Volume:17 Page:L5-L7
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Paranthoen C,Bertru N,Lambert B,Dehaese O,Corre A Le,Even J,Loualiche S,Lissillour F,Moreau G,Simon J C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. The present status of quantum dot lasers

2. Low chirp observed in directly modulated quantum dot lasers

3. 1.3 μm room-temperature GaAs-based quantum-dot laser

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exciton confinement in strain-engineered metamorphic InAs/ InxGa1–xAs quantum dots;Physical Review B;2017-11-08

2. Bibliography;Integrated Lasers on Silicon;2016

3. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11

4. A review of external cavity-coupled quantum dot lasers;Optical and Quantum Electronics;2013-10-02

5. The developments of InP-based quantum dot lasers;Infrared Physics & Technology;2013-09

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