A unified model for MESFET analysis
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/3/i=3/a=004/pdf
Reference7 articles.
1. GaAs FET RF switches
2. A device model for an ion-implanted MESFET
3. Transition-capacitance calculations for double-diffused p-n junctions
4. Accurate modeling of an ion-implanted MESFET
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GaAs OPFET Characterisation Considering Concentration Dependent Carrier Mobility and Life Time;IETE Journal of Research;1999-09
2. Effect of Local Oscillator and Modulating Signal on the Performance of an Ion-Implanted GaAs OPFET;IETE Journal of Research;1999-03
3. Optically-controlled ion-implanted GaAs MESFET characteristic with opaque gate;IEEE Transactions on Electron Devices;1998
4. Optimization of Si MESFET model with Pearson distribution (FMA): a novel approach;International Journal of Electronics;1996-09
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