Determination of defect level parameters in semi-insulating GaAs:Cr from transient photocurrent experiment
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Phase‐shift analysis of modulated photocurrent: Its application to the determination of the energetic distribution of gap states
2. Applications of the Modulated Photocurrent Technique to the Determination of Gap States Characteristics in Hydrogenated Amorphous Silicon
3. An evaluation of phase-shift analysis of modulated photocurrents
4. Deep‐level spectroscopy in high‐resistivity materials
5. Determination of gap-state distributions in amorphous semiconductors from transient photocurrents using a fourier transform technique
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photorefractive parameters in GaAs:Cr with externally applied magnetic field;Optik;2013-10
2. HOLOGRAM RECORDING AND ERASURE IN GaAs:Cr WITH SIMULTANEOUSLY APPLIED ELECTRIC AND MAGNETIC FIELDS;Journal of Nonlinear Optical Physics & Materials;2012-12
3. Photorefractive space charge electric field in GaAs:Cr with external electric and magnetic fields;Applied Physics Letters;2011-05-23
4. Determination of the density of localized states in disordered semiconductors using transient photocurrent spectroscopy with a finite-width light pulse excitation;Philosophical Magazine Letters;2008-03
5. Time photocurrent response and the density of localised states in disordered semiconductors;Solid State Communications;2008-02
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