A metamorphic heterostructure field-effect transistor with a double delta-doped channel-Reference-Cited by-同舟云学术

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A metamorphic heterostructure field-effect transistor with a double delta-doped channel

Published:2007-06-08 Issue:7 Volume:22 Page:784-787
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Huang Dong-Hai,Hsu Wei-Chou,Lin Yu-Shyan,Yeh Jung-Han,Huang Jun-Chin

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing

2. Characteristics of In0.52Al0.48As/InxGa1−xAs HEMT’s with various InxGa1−xAs channels

3. Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT

4. On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness

5. Characteristics of In<tex>$_0.425$</tex>Al<tex>$_0.575$</tex>As–InxGa<tex>$_1-x$</tex>As Metamorphic HEMTs With Pseudomorphic and Symmetrically Graded Channels

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor;Solid-State Electronics;2010-03

2. InGaP/GaAs/InGaAs -doped p-channel field-effect transistor with p+/n+/p camel-like gate structure;Electronics Letters;2009

3. Performance of Surface and Gate-Engineered AlGaAs∕InGaAs Pseudomorphic High-Electron Mobility Transistors;Journal of The Electrochemical Society;2009

4. ELECTRON SUBBAND STRUCTURE AND MOBILITY TRENDS IN P-N DELTA-DOPED QUANTUM WELLS IN SI;Progress In Electromagnetics Research Letters;2008

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