Comparison between quantum and classical results in hot-electron transport
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=3B/a=002/pdf
Reference10 articles.
1. Quantum theory of transient transport in semiconductors: A Monte Carlo approach
2. Impurity scattering in quantum transport simulation
3. A quantum description of drift velocity overshoot at high electric fields in semiconductors
4. Enhancement of drift-velocity overshoot in silicon due to the intracollisional field effect
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