Carrier-carrier interaction effects on transient valley repopulation and velocity in silicon
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/7/i=3B/a=087/pdf
Reference8 articles.
1. Influence of electron-electron scattering on the anisotropic conductivity at high electric fields in Si
2. Effect of electron-electron scattering on hot-electron repopulation inn−Siat 77 K
3. Electron Mobility and Drag Effect in p-Type Silicon
4. Time‐of‐flight measurements of minority‐carrier transport inp‐silicon
5. Electron‐electron interaction and high field transport in Si
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A catchment model of high electric field conduction in high concentration narrow-gap semiconductors;Applied Physics Letters;2000-04-03
2. Effects of electron-hole scattering on transient transport in p-type silicon;Semiconductor Science and Technology;1994-05-01
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