The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Published:2014-09-03 Issue:11 Volume:29 Page:115012
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Yacoub H,Fahle D,Finken M,Hahn H,Blumberg C,Prost W,Kalisch H,Heuken M,Vescan A

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=11/a=115012/pdf

Reference17 articles.

1. 1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

2. Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

3. Device Breakdown and Dynamic effects in GaN Power Switching Devices: Dependencies on Material Properties and Device Design

4. Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

Cited by 58 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates;Applied Physics Letters;2024-08-12

2. Rethinking polarization in wurtzite semiconductors;Applied Physics Letters;2024-06-24

3. Elucidating the formation mechanisms of the parasitic channel with buffer-free GaN/Si hetero-bonding structures;Applied Physics Letters;2024-05-06

4. Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors;Materials Science in Semiconductor Processing;2024-03

5. More than 60% RF loss reduction and improved crystal quality of GaN-on-Si achieved by in-situ doping tert-butylphosphorus;Journal of Crystal Growth;2024-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3