Coupling of carriers injection and charges distribution in Schottky barrier charge-trapping memories using source-side electrons programming
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/29/i=11/a=115006/pdf
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1. Overview and status of metal S/D Schottky-barrier MOSFET technology
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4. Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors
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