Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films-Reference-Cited by-同舟云学术

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Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films

Published:2001-09-27 Issue:11 Volume:16 Page:L77-L80
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wruck D,Lorenz K,Vianden R,Reinhold B,Mahnke H-E,Baranowski J M,Pakula K,Parthier L,Henneberger F

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Ion Beam Epitaxy of in-situ Er-O Co-Doped Silicon Films

2. EXAFS Measurement on Local Structure Around Erbium Atoms Doped in GaAs with Oxygen Co-Doping

3. Exafs and X-ray Ctr Scattering Characterization of Er Doped in InP by Omvpe

4. Atom configuration study of δ-doped Er in InP by fluorescence EXAFS

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Density functional theory study : Electronic structures of RE:GaN in wurtzite Gα15RE1N16;Journal of Physics: Conference Series;2016-08

2. A First-Principles Investigation of the Electronic Structure of Trivalent Rare Earth Ions in Gallium Nitride;Zeitschrift für Physikalische Chemie;2007-12-01

3. Extended X-ray absorption fine structure studies of thulium doped GaN epilayers;Superlattices and Microstructures;2004-10

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