Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors-Reference-Cited by-同舟云学术

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Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

Published:2012-08-07 Issue:10 Volume:27 Page:105019
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Park Ick-Joon,Jeong Chan-Yong,Cho In-Tak,Lee Jong-Ho,Cho Eou-Sik,Kwon Sang Jik,Kim Bosul,Cheong Woo-Seok,Song Sang-Hun,Kwon Hyuck-In

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Flexible Temperature Sensor Array Based on a Graphite-Polydimethylsiloxane Composite

2. Macroelectronics: Perspectives on Technology and Applications

3. Low voltage active pressure sensor based on polymer space-charge-limited transistor

4. A large-area, flexible pressure sensor matrix with organic field-effect transistors for artificial skin applications

5. Conformable, flexible, large-area networks of pressure and thermal sensors with organic transistor active matrixes

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