Influence of p-doping hole transport layer on the performance of organic light-emitting devices-Reference-Cited by-同舟云学术

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Influence of p-doping hole transport layer on the performance of organic light-emitting devices

Published:2008-04-22 Issue:5 Volume:23 Page:055014
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Khan M A,Xu Wei,Khizar-ul-Haq ,Bai Yu,Jiang X Y,Zhang Z L,Zhu W Q

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Organic electroluminescent diodes

2. Low-voltage organic electroluminescent devices using pin structures

3. Molecular semiconductors and junction formation: Phthalocyanine derivatives

4. Theoretical and experimental doping of molecular materials: P and N doping of zinc phthalocyanine

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Blue light emitting diesel soot for photonic applications;Materials Research Express;2018-01-23

2. Low-cost copper complexes as p-dopants in solution processable hole transport layers;Applied Physics Letters;2015-09-07

3. Low-cost caesium phosphate as n-dopant for organic light-emitting diodes;Journal of Applied Physics;2012-04

4. Role of ${\rm Fe}_{3}{\rm O}_{4}$ as a $p$-Dopant in Improving the Hole Injection and Transport of Organic Light-Emitting Devices;IEEE Journal of Quantum Electronics;2011-05

5. The use of a perylenediimide derivative as a dopant in hole transport layer of an organic light emitting device;Applied Surface Science;2011-05

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