Novel transport phenomena in Si/Si1-xGex/Si double-heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Novel transport phenomena in Si/Si1-xGex/Si double-heterojunction bipolar transistors

Published:1989-05-01 Issue:5 Volume:4 Page:370-375
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Shen G D,Xu D X,Willander M,Knall J,Hasan M -A,Hansson G V

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/4/i=5/a=007/pdf

Reference17 articles.

1. Magnetotunneling from accumulation layers inAlxGa1−xAs capacitors

2. Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layer

3. n‐Si/p‐Si1−xGex/n‐Si double‐heterojunction bipolar transistors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion implantation of isoelectronic impurities into InP;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01

2. Temperature effects for current transport in resonant tunneling structures;Applied Physics Letters;1991-02-18

3. A review of theoretical and experimental work on the structure of GexSi1-xstrained layers and superlattices, with extensive bibliography;Advances in Physics;1990-04

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