Effect of post-growth anneal on the photoluminescence properties of GaSbBi
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/29/i=1/a=015003/pdf
Reference16 articles.
1. Band gap of GaAs1−xBix, 0
2. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy
3. Giant Spin-Orbit Bowing inGaAs1−xBix
4. Growth of GaSb1−xBix by molecular beam epitaxy
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