Γ-X mixing in resonant tunnelling through GaAs-AlAs heterostructures and the X valley electron generator
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/4/i=3/a=004/pdf
Reference7 articles.
1. Resonant tunneling viaX‐point states in AlAs‐GaAs‐AlAs heterostructures
2. Zone folding, morphogenesis of charge densities, and the role of periodicity in GaAs-AlxGa1−xAs (001) superlattices
3. Band offsets and zone-folding in GaAsAlAs (001) superlattices
4. Γ-Xmixing in GaAs/AlxGa1−xAs andAlxGa1−xAs/AlAs superlattices
5. Transport characteristics of L-point and Γ-point electrons through GaAs–Ga1−xAlxAs–GaAs(111) double heterojunctions
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1. Special features of electron scattering at AlxGa1−x As/AlAs(001) interfaces;Semiconductors;2003-04
2. Quantum Well Controller;Chinese Physics Letters;1999-07-01
3. Quantum processes of propagation of electron waves in layered structures;Russian Physics Journal;1992-09
4. Boundary conditions for envelope functions in heterostructures;Physical Review B;1992-08-15
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