Hg1-xCdxTe as a semiconductor laser
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/4/i=9/a=015/pdf
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1. Band-to-band Auger recombination effect on InGaAsP laser threshold
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3. Temperature dependence of threshold current of In1-x GaxAsyP1-y lasers with different compositions
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Long Wavelength (λ > 2 μm) Semiconductor Lasers;Semiconductor Lasers II;1999
2. Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectors;Progress in Quantum Electronics;1997-09
3. Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy;Applied Physics Letters;1990-05-21
4. Stimulated emission from a Hg1−xCdxTe epilayer and CdTe/Hg1−xCdxTe heterostructures grown by molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1990-03
5. Photoassisted MBE of II-VI Semiconductor Films and Superlattices;MRS Proceedings;1989
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