Diffusion behaviour of vanadium in GaN thin films studied by secondary ion mass spectrometry

Author:

Bchetnia A,Saidi C,Souissi M,Boufaden T,El Jani B

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Study of impurities diffusion in Al2O3/GaN/AlxGa1−xN hetero-structures;Journal of Materials Science: Materials in Electronics;2023-01-25

2. Theoretical study of the structure and magnetism of Ga 1 − x V x Sb compounds for spintronic applications;Applied Physics Letters;2020-02-24

3. Diffusion in Semiconductors;Springer Handbook of Electronic and Photonic Materials;2017

4. Waveguide effect of Fe doped GaN alloy grown by MOCVD;8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices;2016-10-25

5. Study of Al diffusion in GaN during metal organic vapor phase epitaxy of AlGaN/GaN and AlN/GaN structures;Materials Science in Semiconductor Processing;2016-02

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