Selective-area ion implantation using positive photoresist mask for GaAs digital integrated circuits-Reference-Cited by-同舟云学术

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Selective-area ion implantation using positive photoresist mask for GaAs digital integrated circuits

Published:1993-12-01 Issue:12 Volume:8 Page:2146-2150
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Naik A A,Sehgal B K,Mohan S,Dayal S,Gulati R,Chandra I

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=12/a=019/pdf

Reference14 articles.

1. IVb-3 low power depletion mode ion-implanted GaAs FET integrated circuits

2. GaAs LSI-directed MESFET's with self-aligned implantation for n+-layer technology (SAINT)

3. 1-GHz GaAs ADC building blocks

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of single-layered Au nanoparticles in Au ion implanted TiO2 and SrTiO3;Materials Letters;2004-02

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