A model for exciton binding energies in III-V and II-VI quantum wells
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/10/i=12/a=003/pdf
Reference37 articles.
1. Observation of the excited level of excitons in GaAs quantum wells
2. Exciton binding energy in quantum wells
3. Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structures
4. Energy levels of Wannier excitons inGaAs−Ga1−xAlxAsquantum-well structures
5. Wannier excitons in semiconductor quantum wells with small valence-band offsets: A generalized variational approach
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