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Defects in and device properties of semi-insulating GaAs

  • Published:1992-01-01 Issue:1A Volume:7 Page:A215-A223
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Oda O,Yamamoto H,Seiwa M,Kano G,Inoue T,Mori M,Shimakura H,Oyake M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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1. Fundamentals and engineering of defects;Progress in Crystal Growth and Characterization of Materials;2016-06

2. Semiconductors Grown from the Melt: Reduction of the Dislocation Density;Reference Module in Materials Science and Materials Engineering;2016

3. Defect Generation and Interaction during Crystal Growth;Handbook of Crystal Growth;2015

4. Vertical Bridgman Growth of Binary Compound Semiconductors;Handbook of Crystal Growth;2015

5. Near-band-gap photoinduced nuclear spin dynamics in semi-insulating GaAs: Hyperfine- and quadrupolar-driven relaxation;Physical Review B;2013-12-31
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