Subbands in inversion layers on NGS for Egapto 0
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=1S/a=053/pdf
Reference9 articles.
1. Band mixing in narrow gap semiconductors
2. Zener-tunnelling of inversion layer electrons on small gap semiconductors
3. Self-Consistent Treatment of Resonant Subband States in Inversion Layers on HgCdTe
4. Theory of n-inversion layers in narrow gap semiconductors: the role of the boundary conditions
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2. Interband mixing between two-dimensional states localized in a surface quantum welland heavy-hole states of the valence band in a narrow-gap semiconductor;Physical Review B;1997-05-15
3. Tunneling studies of two-dimensional states in semiconductors with inverted band structure: Spin-orbit splitting and resonant broadening;Physical Review B;1996-07-15
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