Molecular beam epitaxy of laterally structured lead chalcogenides for the fabrication of buried heterostructure lasers-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of laterally structured lead chalcogenides for the fabrication of buried heterostructure lasers

Published:1993-01-01 Issue:1S Volume:8 Page:S334-S336
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lambrecht A,Bottner H,Agne M,Kurbel R,Fach A,Halford B,Schiessl U,Tacke M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=1S/a=074/pdf

Reference9 articles.

1. Infrared double‐heterostructure diode lasers made by molecular beam epitaxy of Pb1−xEuxSe

2. Near‐room‐temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques

3. Buried waveguide double-heterostructure PbEuSe-lasers grown by MBE

4. Ion implantation in IV?VI semiconductors

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