Characterization of InAs0.91Sb0.09for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. InAsSb-based photodetectors;Mid-infrared Optoelectronics;2020
2. Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection;Applied Physics Letters;2019-04-29
3. Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy;Materials Science in Semiconductor Processing;2015-12
4. Analytical modeling and ATLAS simulation for a homojunction LED in the mid-infrared spectral region;Optoelectronics Letters;2009-11
5. Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance;Thin Solid Films;2008-09
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