Reverse I-V characteristics of Au/semi-insulating InP (100)-Reference-Cited by-同舟云学术

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Reverse I-V characteristics of Au/semi-insulating InP (100)

Published:1993-05-01 Issue:5 Volume:8 Page:709-711
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lee T C,Au H L,Chen T P,Ling C C,Fung S,Beling C D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/8/i=5/a=016/pdf

Reference15 articles.

1. A study of the deep acceptor levels of iron in InP

2. Deep levels in Fe-doped InP

3. Positron-annihilation spectroscopy of native vacancies in as-grown GaAs

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation of the reverseI–Vcharacteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs;Semiconductor Science and Technology;2007-06-07

2. Semi-insulating GaAs as a relaxation semiconductor;Journal of Applied Physics;1998-06-15

3. Ohmic I–V characteristics in semi-insulating semiconductor diodes;Solid State Communications;1998-03

4. Reverse I–V characteristics of Au/semi-insulating GaAs(1 0 0);Solid State Communications;1997-03

5. Positron transport studies at the Au - (InP:Fe) interface;Journal of Physics: Condensed Matter;1996-03-04

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