On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals-Reference-Cited by-同舟云学术

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On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals

Published:2007-03-28 Issue:5 Volume:22 Page:475-480
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lai Po-Hsien,Fu Ssu-I,Hung Ching-Wen,Tsai Yan-Ying,Chen Tzu-Pin,Chen Chun-Wei,Huang Yi-Wen,Liu Wen-Chau

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. 50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz

2. Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates

3. Mobility Enhancement and Breakdown Behavior in InP-Based Heterostructure Field-effect Transistor

4. A novel InGaP/InGaAs/GaAs double /spl delta/-doped pHEMT with camel-like gate structure

5. High-temperature thermal stability performance in /spl delta/-doped In/sub 0.425/Al/sub 0.575/As--In/sub 0.65/Ga/sub 0.35/As metamorphic HEMT

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Stability of HfO2|AlGaN|GaN Normally-Off Transistors with Ni|Au and Pt Gate Metals;Semiconductors;2021-07

2. GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review;Microelectronics Journal;2019-10

3. On the temperature-dependent characteristics of a Pd/InAlAs based electroless-plating gate metamorphic heterostructure field-effect transistor (MHFET);Solid-State Electronics;2013-01

4. Comprehensive Temperature-Dependent Studies of Metamorphic High Electron Mobility Transistors With Double and Single $\delta$-Doped Structures;IEEE Transactions on Electron Devices;2011-12

5. Improved Thermal Stability Performance of an MHEMT with a Double δ-Doped Structure;Electrochemical and Solid-State Letters;2011

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