Transient response of silicon devices at 4.2 K. I. Theory
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=9/a=011/pdf
Reference35 articles.
1. Transient response of silicon devices at 4.2 K. II. Application to the case of a metal-oxide-semiconductor transistor
2. Time dependence of depletion region formation in phosphorus‐doped silicon MOS devices at cryogenic temperatures
3. Transient response ofn‐channel metal‐oxide‐semiconductor field‐effect transistors during turnon at 10–25 °K
4. Transient-current study of field-assisted emission from shallow levels in silicon
5. Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K
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