Passivation properties of CdS thin films grown by chemical bath deposition on GaSb: the influence of the S/Cd ratio in the solution and of the CdS layer thickness on the surface recombination velocity-Reference-Cited by-同舟云学术

Passivation properties of CdS thin films grown by chemical bath deposition on GaSb: the influence of the S/Cd ratio in the solution and of the CdS layer thickness on the surface recombination velocity

Published:2005-12-09 Issue:1 Volume:21 Page:76-80
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Vigil-Galán O,Ximello-Quiebras J N,Aguilar-Hernández J,Contreras-Puente Gerardo,Cruz-Orea A,Mendoza-Álvarez J G,Cardona-Bedoya J A,Ruiz C M,Bermúdez V

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Photon recycling and recombination processes in 0.53 eV p-type InGaAsSb

2. Fabrication and simulation of GaSb thermophotovoltaic cells

3. Reduction of interfacial recombination in GaInAsSb/GaSb double heterostructures

4. Ellipsometric investigations of (1 0 0) GaSb surface under chemical etching and sulfide treatment

5. Sulphur passivation of gallium antimonide surfaces

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