The over-saturation phenomenon of a Hg0.46Cd0.54Te photovoltaic detector irradiated by a CW laser-Reference-Cited by-同舟云学术

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The over-saturation phenomenon of a Hg0.46Cd0.54Te photovoltaic detector irradiated by a CW laser

Published:2011-10-12 Issue:11 Volume:26 Page:115004
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Jiang Tian,Cheng Xiang-Ai,Zheng Xin,Jiang Hou-Man,Lu Qi-Sheng

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Laser-induced damage in InSb at 1.06 μm wavelength—a comparative study with Ge, Si and GaAs

2. Laser induced damage in GaAs at 1.06 μm wavelength: surface effects

3. A generalized thermal model for laser damage in infrared detectors

4. Thermal recovery processes in laser irradiated HgCdTe (PC) detectors

5. Study of photovoltaic effect photovoltaic HgCdTe detector irradiated by spectral unrelated laser

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3. Two-dimensional modeling of the saturation characteristics of laser irradiation on HgCdTe mid-wave infrared photovoltaic devices;Earth and Space: From Infrared to Terahertz (ESIT 2022);2023-01-31

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