Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements-Reference-Cited by-同舟云学术

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Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements

Published:2010-12-24 Issue:2 Volume:26 Page:025013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Shangina E L,Smirnov K V,Morozov D V,Kovalyuk V V,Goltsman G N,Verevkin A A,Toropov A I,Mauskopf P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. Electron heating and huge positive magnetoresistance in an AlGaAs∕GaAs high electron mobility transistor structure at high temperatures

2. 3.4 THz heterodyne receiver using a hot electron bolometer and a distributed feedback quantum cascade laser

3. Terahertz heterodyne receiver with quantum cascade laser and hot electron bolometer mixer in a pulse tube cooler

4. A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses

5. Electrically pumped photonic-crystal terahertz lasers controlled by boundary conditions

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1. Intrinsic limit to low-temperature mobility in semiconductor structures with two-dimensional electrons;Semiconductor Science and Technology;2012-08-28

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