Gas-phase doping of silicon with sulfur-Reference-Cited by-同舟云学术

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Gas-phase doping of silicon with sulfur

Published:2011-03-23 Issue:5 Volume:26 Page:055021
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Astrov Yu A,Portsel L M,Lodygin A N,Shuman V B

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. The effect of dopant diffusion vapor pressure on the properties of sulfur and selenium doped silicon infrared detectors

2. The electrical properties of sulphur in silicon

3. The energy levels and the defect signature of sulfur-implanted silicon by thermally stimulated measurements

4. Spectroscopy of the neutral sulphur-related centres in silicon

5. High-resolution studies of sulfur- and selenium-related donor centers in silicon

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1. Magnesium‐Related Donors in Silicon: State of the Art;physica status solidi (a);2022-10-27

2. Infrared absorption cross sections, and oscillator strengths of interstitial and substitutional double donors in silicon;Physical Review Materials;2021-11-29

3. First-principles identification of deep energy levels of sulfur impurities in silicon and their carrier capture cross sections;Journal of Physics D: Applied Physics;2021-06-04

4. Tertiarybutylarsine damage-free thin-film doping and conformal surface coverage of substrate-released horizontal Si nanowires;Applied Surface Science;2020-04

5. Investigation of the Magnesium Impurity in Silicon;Semiconductors;2020-04

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