Author:
Héliou R,Brebner J L,Roorda S
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
12 articles.
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1. Effect of temperature on Xe implantation-induced damage in 4H-SiC;Journal of Physics: Conference Series;2019-05-01
2. Strain buildup in 4H-SiC implanted with noble gases at low dose;Materials Today: Proceedings;2018
3. Implantation damage in heavy gas implanted 4H-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-05
4. Strain build-up in SiC implanted at different temperatures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-05
5. Damage accumulation in He implanted SiC at different temperatures;physica status solidi (a);2012-11-19