Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime-Reference-Cited by-同舟云学术

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Oscillations of 2D electron density in GaAs/Ga0.67Al0.33As heterostructures in the QHE regime

Published:1999-09-07 Issue:10 Volume:14 Page:915-920
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Raymond A,Juillaguet S,Elmezouar I,Zawadzki W,Sadowski M L,Kamal-Saadi M,Etienne B

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference49 articles.

1. Cyclotron masses in n-GaAs/Ga 1−x Al x As heterojunctions

2. Cyclotron resonance inAlxGa1−xAs-GaAs heterostructures with tunable charge density via front gates

3. Filling-factor-dependent cyclotron mass in space-charge layers on GaAs

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reservoir model for two-dimensional electron gases in quantizing magnetic fields: A review;physica status solidi (b);2013-10-04

2. Magnetometry of low-dimensional electron and hole systems;Journal of Physics: Condensed Matter;2009-02-05

3. Plateaus in the Dispersion of Two-Dimensional Magnetoplasmons in GaAs Quantum Wells: Theoretical Evidence of an Electron Reservoir;Physical Review Letters;2008-01-23

4. Nonlinear dependence of the magnetophotoluminescence energies of asymmetricGaAs∕Ga0.67Al0.33Asquantum wells on an external magnetic field;Physical Review B;2007-06-15

5. Transport of Dirac quasiparticles in graphene: Hall and optical conductivities;Physical Review B;2006-06-13

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