ECR/magnetic mirror coupled plasma etching of GaAs using CH4:H2:Ar
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/6/i=9/a=021/pdf
Reference10 articles.
1. Reactive ion etching of GaAs using a mixture of methane and hydrogen
2. Selective metalorganic reactive ion etching of molecular-beam epitaxy GaAs/AlxGa1−xAs
3. Reactive ion etching of GaAs using CH4: in He, Ne and Ar
4. Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Ar addition in ECR CH4/H2/Ar plasma etching of GaAs, InP and InGaP;Solid-State Electronics;1996-07
2. Comparison between etching in Cl2 and BCl3 for compound semiconductors using a multipolar electron cyclotron resonance source;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-11
3. Formation and damage of sidewalls after Cl2/CH4 based reactive ion beam of InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-09
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