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Surface-barrier p-CdTe-based photodiodes

  • Published:1999-01-01 Issue:4 Volume:14 Page:373-377
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Kosyachenko L A,Sklyarchuk V M,Sklyarchuk Ye F,Ulyanitsky K S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical model for studying the role of ZnS-doped CdS on the performance of CZTSSe solar cells;Chalcogenide Letters;2023-05-01

2. Effect of the Electric Field Strength on the Energy Resolution of Cr/CdTe/Pt Detectors;IEEE Transactions on Nuclear Science;2020-11

3. DETECTORS BASED ON Cd(Zn)Te SEMICONDUCTORS FOR X-RAY AND GAMMA RADIATION REGISTRATION;Geochemistry of technogenesis;2020-08

4. Exciton–Phonon Interactions Govern Charge-Transfer-State Dynamics in CdSe/CdTe Two-Dimensional Colloidal Heterostructures;Journal of the American Chemical Society;2018-10-07

5. Low leakage current Ni/CdZnTe/In diodes for X/γ-ray detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2018-01
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