Modelling the optimum performance of InGaAs/InP-based asymmetric Fabry-Perot modulator devices
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/5/i=6/a=010/pdf
Reference10 articles.
1. High contrast-ratio electroabsorptive GaInAs/InP quantum well modulator
2. Quantum‐confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy
3. Electrodispersive multiple quantum well modulator
4. Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1
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1. Active holography in InGaAs/InP quantum-well microcavities;Optics Letters;2013-07-29
2. Design of externally tuned asymmetric fibre Fabry–Perot electroabsorption optical modulators;IEE Proceedings - Optoelectronics;1998-12-01
3. Predicted performance of Franz-Keldysh effect optical reflection modulators and comparisons with similar multiple quantum well-based devices;IEE Proceedings - Optoelectronics;1994-08-01
4. Determination of persistent photoconductivity within semiconductor epitaxial layers by photoconductive gain;Physical Review B;1992-09-15
5. Role of electrorefraction in quantum‐well Fabry–Perot modulators;Applied Physics Letters;1992-03-23
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