Probing the anisotropic dispersion of hole states in (100) and (311)A AlAs/GaAs/AlAs quantum wells-Reference-Cited by-同舟云学术

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Probing the anisotropic dispersion of hole states in (100) and (311)A AlAs/GaAs/AlAs quantum wells

Published:1994-03-01 Issue:3 Volume:9 Page:298-309
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hayden R K,Eaves L,Henini M,Valadares E C,Kuhn O,Maude D K,Portal J C,Takamasu T,Miura N,Ekenberg U

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=3/a=010/pdf

Reference56 articles.

1. Band Structure of AlAs-GaAs(100) Superlattices

2. Electronic Structures of GaAs-Ga1−xAlxAsRepeated Monolayer Heterostructure

3. Resonant tunneling of holes in AlAs‐GaAs‐AlAs heterostructures

4. Resonant tunneling in Si/Si1−xGexdouble‐barrier structures

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1. Noncollinear Paramagnetism of a GaAs Two-Dimensional Hole System;Physical Review Letters;2014-12-03

2. Magneto-Spectroscopy of Semiconductors;Comprehensive Semiconductor Science and Technology;2011

3. Photoluminescence study of type-II GaAs quantum well wires grown on nano-faced (311)A surface: Quasi-1D exciton observation?;Microelectronics Journal;2006-12

4. Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces;Microelectronics Journal;2002-07

5. Negative effective mass mechanism of negative differential drift velocity and terahertz generation;IEEE Journal of Selected Topics in Quantum Electronics;2001

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