Characterization of n+Ga1-xAlxAs (x<0.3) epitaxial layers by photocurrent, photovoltage and electrolyte electroreflectance spectroscopies
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=7/a=020/pdf
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2. Determination of Some Physical Properties of N‐Type Semiconductor Alloys ( 0 ≤ x ≤ 1 ) by Photoelectrochemistry
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4. Anomalous electrical and optical characteristics of GaAs/AlxGa1−xAs heterostructure materials
5. Flory approximation for directed branched polymers and directed percolation
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1. Characterisation of CdS∣CdTe heterojunctions by photocurrent spectroscopy and electrolyte electroreflectance/absorbance spectroscopy (EEA/EER);Journal of Electroanalytical Chemistry;2002-09
2. Contribution to the Impedance Analysis of GaAs–Electrolyte Junctions;physica status solidi (a);1999-06
3. The potential distribution across the semiconductor | electrolyte interface: A study by electrolyte electroreflectance spectroscopy of GaAs and Ga1-xAlxAs under conditions of photodissolution;Journal of Electroanalytical Chemistry;1994-09
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