Band bending, electronic affinity and density of states at several (100) surfaces of boron-doped homoepitaxial diamond thin films
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference28 articles.
1. Smooth and high-rate reactive ion etching of diamond
2. Etching of p- and n-type doped monocrystalline diamond using an ECR oxygen plasma source
3. Exceptionally high voltage Schottky diamond diodes and low boron doping
4. Surface-state dispersion of hydrogenated and hydrogen-free diamond (100) surfaces determined by angle-resolved photoemission
5. Photoelectron emission from nitrogen- and boron-doped diamond (100) surfaces
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