Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices-Reference-Cited by-同舟云学术

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Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices

Published:2003-10-01 Issue:1 Volume:19 Page:50-53
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Konofaos N,Evangelou E K,Aslanoglou X,Kokkoris M,Vlastou R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Structure of defects in silicon oxynitride films

2. Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces

3. Silicon integrated circuit technology from past to future

4. Electron trapping in oxynitride layers in metal‐oxide‐semiconductor structures

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