The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates-Reference-Cited by-同舟云学术

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The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates

Published:1998-07-01 Issue:7 Volume:13 Page:746-749
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Li C R,Tanner B K,Ashenford D E,Hogg J H C,Lunn B

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. MBE growth of CdTe and Cd1−xMnxTe layers and multilayers on InSb substrates

2. Stimulated emission from Cd1−xMnxTe–CdTe heterostructures and Cd1−xMnxTe–Cd1−yMnyTe multiple quantum well structures

3. MBE growth of CdTe, Hg1−xCdxTe, and multilayer structures: Achievements, problems, and prospects

4. Compound formation and large microstrains at the interface of II-VI/III-V semiconductors detected by Raman spectroscopy

5. Molecular‐beam‐epitaxy growth of CdTe on InSb (110) monitoredin situby Raman spectroscopy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The kinetics of point defects in low-power pulsed laser annealing of ion-implanted CdTe∕CdMnTe double quantum well structures;Journal of Applied Physics;2005-10-15

2. Influence of misfit dislocations on the electrical properties of CdTe layers grown by molecular beam epitaxy on InSb;Applied Physics Letters;2004-05-17

3. STUDIES OF THE IMPURITY EFFECTS ON CRYSTALLINE QUALITY BY HIGH-RESOLUTION X-RAY DIFFRACTION;Acta Physica Sinica;2001

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