Electron quasi-Fermi level splitting at the base–emitter junction of HBTs and DHBTs-Reference-Cited by-同舟云学术

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Electron quasi-Fermi level splitting at the base–emitter junction of HBTs and DHBTs

Published:2004-02-02 Issue:3 Volume:19 Page:552-557
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

García-Loureiro Antonio J,López-González Juan M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Law of the junction for degenerate material with position-dependent band gap and electron affinity

2. An Ebers-Moll model for the heterostructure bipolar transistor

3. On the thermionic-diffusion theory of minority transport in heterostructure bipolar transistors

4. p-n heterojunctions

5. Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's

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