Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization-Reference-Cited by-同舟云学术

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Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization

Published:2004-02-02 Issue:3 Volume:19 Page:501-504
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Soshnikov I P,Kovsh A R,Ustinov V M,Kryzhanovskaya N V,Ledentsov N N,Bimberg D,Kirmse H,Neumann W,Gorbenko O M,Lin G,Wang J,Shiao R S,Chi J

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy

2. Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates

3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

4. Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE growth of sharp interfaces in dilute-nitride quantum wells with improved nitrogen-plasma design;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-05

2. Properties of GaAsN nanowires grown by magnetron-sputtering deposition;Semiconductors;2009-07

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