Molecular beam epitaxy of ZnS on (001) GaAs using elemental sources-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of ZnS on (001) GaAs using elemental sources

Published:1994-12-01 Issue:12 Volume:9 Page:2229-2232
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Lang M,Schikora D,Giftge C,Widmer T,Forstner A,Brunthaler G,Ortenberg M von,Lischka K

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=12/a=011/pdf

Reference18 articles.

1. Identification of Na acceptor in MOCVD-grown ZnS films and the effect of UV light illumination

2. Effects of [H2S]/[DMZn] Molar Ratio on ZnS Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

3. Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH4)2SxSolution

4. Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy

5. Study of potassium titanyl phosphate (KTP) flux growth by holographic phase-contrast interferometric microphotography

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thickness dependence of double crystal rocking curves and photoluminescence in ZnS epilayers grown on GaAs(100) and GaP(100);Applied Surface Science;1999-10

2. Epitaxial growth of high-quality ZnS films on sapphire and silicon by pulsed laser deposition;Semiconductor Science and Technology;1999-01-01

3. Structural characterization and surface lattice strain determination of ZnS/GaAs heterostructures grown by metalorganic vapour phase epitaxy;Journal of Crystal Growth;1997-04

4. Light hole-heavy hole exciton crossover in strained ZnS;Solid State Communications;1996-02

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